original pro 2018 software (Bruker Corporation)
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Bruker Corporation
original pro 2018 software
Original Pro 2018 Software, supplied by Bruker Corporation, used in various techniques. Bioz Stars score: 99/100, based on 181736 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/original+pro+2018+software/D8+ADVANCE/10__1007_slash_s00170___025___16119___0-124-19-15
Average 99 stars, based on 181736 article reviews
Original Pro 2018 Software, supplied by Bruker Corporation, used in various techniques. Bioz Stars score: 99/100, based on 181736 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/original+pro+2018+software/D8+ADVANCE/10__1007_slash_s00170___025___16119___0-124-19-15
Average 99 stars, based on 181736 article reviews
original pro 2018 software - by Bioz Stars,
2026-09
99/100 stars
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X-ray Diffraction:Article Title: Optical emission spectroscopy and ultrafast arc management strategy on the quality of AlN thin films using a 13.56 MHz RF generator Article Snippet: This work investigates the deposition of AlN thin films on 4-in Si(100) substrates via reactive RF magnetron sputtering (13.56 MHz, 500 W RF power, 5 mTorr total pressure, N2/Ar flow of 60/15 SCCM, 5 cm target-to-substrate distance, room temperature, 60 min) under systematic variation of reflection coefficient thresholds (Γ = 0.2 ~ 0.8) and three suppression/reignition regimes (2 μs/2 μs, 100 μs/50 μs, 1000 μs/500 μs).. The key innovation of this study is the introduction of an ultrafast 2 μs/2 μs arc‐management cycle at Γ = 0.2—an order of magnitude faster than prior art—that intercepts micro-discharge events before they escalate.. Adopting this scheme yields the lowest arc energy, narrows the AlN (002) XRD FWHM to 0.31° (vs. 0.36° under 1000 μs/500 μs), and reduces AFM-measured RMS roughness to 1.12 nm (vs. 1.74 nm). Software:Article Title: Optical emission spectroscopy and ultrafast arc management strategy on the quality of AlN thin films using a 13.56 MHz RF generator Article Snippet: This work investigates the deposition of AlN thin films on 4-in Si(100) substrates via reactive RF magnetron sputtering (13.56 MHz, 500 W RF power, 5 mTorr total pressure, N2/Ar flow of 60/15 SCCM, 5 cm target-to-substrate distance, room temperature, 60 min) under systematic variation of reflection coefficient thresholds (Γ = 0.2 ~ 0.8) and three suppression/reignition regimes (2 μs/2 μs, 100 μs/50 μs, 1000 μs/500 μs).. The key innovation of this study is the introduction of an ultrafast 2 μs/2 μs arc‐management cycle at Γ = 0.2—an order of magnitude faster than prior art—that intercepts micro-discharge events before they escalate.. Adopting this scheme yields the lowest arc energy, narrows the AlN (002) XRD FWHM to 0.31° (vs. 0.36° under 1000 μs/500 μs), and reduces AFM-measured RMS roughness to 1.12 nm (vs. 1.74 nm). |